FQB7N20LTM. Аналоги и основные параметры

Наименование производителя: FQB7N20LTM

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 63 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 125 ns

Cossⓘ - Выходная емкость: 55 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.75 Ohm

Тип корпуса: D2-PAK

Аналог (замена) для FQB7N20LTM

- подборⓘ MOSFET транзистора по параметрам

 

FQB7N20LTM даташит

 ..1. Size:567K  fairchild semi
 fqb7n20ltm.pdf pdf_icon

FQB7N20LTM

December 2000 TM QFET QFET QFET QFET FQB7N20L / FQI7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.5A, 200V, RDS(on) = 0.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.8 nC) planar stripe, DMOS technology. Low Crss ( typical 8.5 pF) This advanced

 9.1. Size:1031K  fairchild semi
 fqb7n65ctm.pdf pdf_icon

FQB7N20LTM

October 2008 QFET FQB7N65C 650V N-Channel MOSFET Features Description 7A, 650V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 28 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fa

 9.2. Size:735K  fairchild semi
 fqb7n30tm.pdf pdf_icon

FQB7N20LTM

April 2000 TM QFET QFET QFET QFET FQB7N30 / FQI7N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7A, 300V, RDS(on) = 0.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has

 9.3. Size:836K  fairchild semi
 fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80.pdf pdf_icon

FQB7N20LTM

October 2008 QFET FQB7N80 / FQI7N80 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 19 pF) This advanced technology has been especially

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