FQB7N60TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQB7N60TM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 142 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 135 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: D2-PAK

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FQB7N60TM Datasheet (PDF)

..1. Size:651K fairchild semi
fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf

October 2008QFETFQB7N60 / FQI7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been especially

7.1. Size:770K onsemi
fqb7n60 fqi7n60.pdf

FQB7N60 / FQI7N60N-Channel QFET MOSFET600 V, 7.4 A, 1.0 Features 7.4 A, 600 V, RDS(on) = 1.0 (Max.) @VGS = 10 V,Description ID = 3.7 AThis N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 29 nC)produced using ON Semiconductors proprietary Low Crss (Typ. 16 pF)planar stripe and DMOS technology. This advanced MOSFET technology has been

8.1. Size:1031K fairchild semi
fqb7n65ctm.pdf

October 2008QFETFQB7N65C650V N-Channel MOSFETFeatures Description 7A, 650V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 28 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to Fa

9.1. Size:735K fairchild semi
fqb7n30tm.pdf

April 2000TMQFETQFETQFETQFETFQB7N30 / FQI7N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7A, 300V, RDS(on) = 0.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has

9.2. Size:836K fairchild semi
fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80.pdf

October 2008QFETFQB7N80 / FQI7N80800V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 19 pF)This advanced technology has been especially

9.3. Size:554K fairchild semi
fqb7n10ltm fqi7n10ltu.pdf

December 2000TMQFETQFETQFETQFETFQB7N10L / FQI7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced

9.4. Size:567K fairchild semi
fqb7n20ltm.pdf

December 2000TMQFETQFETQFETQFETFQB7N20L / FQI7N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.5A, 200V, RDS(on) = 0.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.8 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced

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