FQB7N60TM. Аналоги и основные параметры

Наименование производителя: FQB7N60TM

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 142 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 80 ns

Cossⓘ - Выходная емкость: 135 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm

Тип корпуса: D2-PAK

Аналог (замена) для FQB7N60TM

- подборⓘ MOSFET транзистора по параметрам

 

FQB7N60TM даташит

 ..1. Size:651K  fairchild semi
 fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf pdf_icon

FQB7N60TM

October 2008 QFET FQB7N60 / FQI7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology has been especially

 7.1. Size:770K  onsemi
 fqb7n60 fqi7n60.pdf pdf_icon

FQB7N60TM

FQB7N60 / FQI7N60 N-Channel QFET MOSFET 600 V, 7.4 A, 1.0 Features 7.4 A, 600 V, RDS(on) = 1.0 (Max.) @VGS = 10 V, Description ID = 3.7 A This N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 29 nC) produced using ON Semiconductor s proprietary Low Crss (Typ. 16 pF) planar stripe and DMOS technology. This advanced MOSFET technology has been

 8.1. Size:1031K  fairchild semi
 fqb7n65ctm.pdf pdf_icon

FQB7N60TM

October 2008 QFET FQB7N65C 650V N-Channel MOSFET Features Description 7A, 650V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 28 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fa

 9.1. Size:735K  fairchild semi
 fqb7n30tm.pdf pdf_icon

FQB7N60TM

April 2000 TM QFET QFET QFET QFET FQB7N30 / FQI7N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7A, 300V, RDS(on) = 0.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has

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