FQB8N25TM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQB8N25TM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 87 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 95 nS

Cossⓘ - Capacitancia de salida: 85 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm

Encapsulados: D2-PAK

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FQB8N25TM datasheet

 ..1. Size:594K  fairchild semi
 fqb8n25tm.pdf pdf_icon

FQB8N25TM

May 2000 TM QFET QFET QFET QFET FQB8N25 / FQI8N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.0A, 250V, RDS(on) = 0.55 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has

 9.1. Size:1032K  fairchild semi
 fqb8n60cf fqb8n60cftm.pdf pdf_icon

FQB8N25TM

October 2008 TM QFET FQB8N60CF 600V N-Channel MOSFET Features Description 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 28nC) DMOS technology. Low Crss ( typical 12pF) This advanced technology has been especially tailored to

 9.2. Size:965K  fairchild semi
 fqb8n60c fqi8n60c fqi8n60ctu.pdf pdf_icon

FQB8N25TM

October 2008 QFET FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especiall

 9.3. Size:430K  fairchild semi
 fqb8n90ctm.pdf pdf_icon

FQB8N25TM

December 2013 FQB8N90C N-Channel QFET MOSFET 900 V, 6.3 A, 1.9 Description Features These N-Channel enhancement mode power field effect 6.3 A, 900 V, RDS(on) = 1.9 (Max.) @ VGS = 10 V transistors are produced using Fairchild s proprietary, planar Low Gate Charge (Typ. 35 nC) stripe, DMOS technology. This advanced technology has been Low Crss (Typ. 12 pF) especia

MOSTRAR MÁS

Otros transistores... FQB7N10LTM, FQB7N20LTM, FQB7N30TM, FQB7N60TM, FQB7N65CTM, FQB7N80TMAM002, FQB7P06TM, FQB85N06TMAM002, 2SK3568, FQB8N60CFTM, FQB8P10TM, FQB9N08LTM, FQB9N08TM, FQB9N15TM, FQB9N25CTM, FQB9N25TM, FQB9N50CFTM