FQB8N25TM Todos los transistores

 

FQB8N25TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQB8N25TM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 87 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 95 nS
   Cossⓘ - Capacitancia de salida: 85 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
   Paquete / Cubierta: D2-PAK
 

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FQB8N25TM Datasheet (PDF)

 ..1. Size:594K  fairchild semi
fqb8n25tm.pdf pdf_icon

FQB8N25TM

May 2000TMQFETQFETQFETQFETFQB8N25 / FQI8N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.0A, 250V, RDS(on) = 0.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has

 9.1. Size:1032K  fairchild semi
fqb8n60cf fqb8n60cftm.pdf pdf_icon

FQB8N25TM

October 2008TMQFETFQB8N60CF600V N-Channel MOSFETFeatures Description 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 28nC)DMOS technology. Low Crss ( typical 12pF)This advanced technology has been especially tailored to

 9.2. Size:965K  fairchild semi
fqb8n60c fqi8n60c fqi8n60ctu.pdf pdf_icon

FQB8N25TM

October 2008QFETFQB8N60C / FQI8N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especiall

 9.3. Size:430K  fairchild semi
fqb8n90ctm.pdf pdf_icon

FQB8N25TM

December 2013FQB8N90CN-Channel QFET MOSFET900 V, 6.3 A, 1.9 Description FeaturesThese N-Channel enhancement mode power field effect 6.3 A, 900 V, RDS(on) = 1.9 (Max.) @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, planar Low Gate Charge (Typ. 35 nC)stripe, DMOS technology. This advanced technology has been Low Crss (Typ. 12 pF)especia

Otros transistores... FQB7N10LTM , FQB7N20LTM , FQB7N30TM , FQB7N60TM , FQB7N65CTM , FQB7N80TMAM002 , FQB7P06TM , FQB85N06TMAM002 , 5N65 , FQB8N60CFTM , FQB8P10TM , FQB9N08LTM , FQB9N08TM , FQB9N15TM , FQB9N25CTM , FQB9N25TM , FQB9N50CFTM .

History: VB162KX | DMT7N65 | EFC2J004NUZ | HFP2N60U | HGK220N25S | HFD6N60U | APT50M50JLL

 

 
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