FQB8N25TM Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FQB8N25TM
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 87 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 95 ns
Cossⓘ - Выходная емкость: 85 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.55 Ohm
Тип корпуса: D2-PAK
Аналог (замена) для FQB8N25TM
FQB8N25TM Datasheet (PDF)
fqb8n25tm.pdf

May 2000TMQFETQFETQFETQFETFQB8N25 / FQI8N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.0A, 250V, RDS(on) = 0.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has
fqb8n60cf fqb8n60cftm.pdf

October 2008TMQFETFQB8N60CF600V N-Channel MOSFETFeatures Description 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 28nC)DMOS technology. Low Crss ( typical 12pF)This advanced technology has been especially tailored to
fqb8n60c fqi8n60c fqi8n60ctu.pdf

October 2008QFETFQB8N60C / FQI8N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especiall
fqb8n90ctm.pdf

December 2013FQB8N90CN-Channel QFET MOSFET900 V, 6.3 A, 1.9 Description FeaturesThese N-Channel enhancement mode power field effect 6.3 A, 900 V, RDS(on) = 1.9 (Max.) @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, planar Low Gate Charge (Typ. 35 nC)stripe, DMOS technology. This advanced technology has been Low Crss (Typ. 12 pF)especia
Другие MOSFET... FQB7N10LTM , FQB7N20LTM , FQB7N30TM , FQB7N60TM , FQB7N65CTM , FQB7N80TMAM002 , FQB7P06TM , FQB85N06TMAM002 , 5N65 , FQB8N60CFTM , FQB8P10TM , FQB9N08LTM , FQB9N08TM , FQB9N15TM , FQB9N25CTM , FQB9N25TM , FQB9N50CFTM .
History: STU328S | AP96T07AGP-HF | SML100M12MSF | 4N70G-T2Q-T | AP9974AGH | 2SK1374 | IPD30N12S3L-31
History: STU328S | AP96T07AGP-HF | SML100M12MSF | 4N70G-T2Q-T | AP9974AGH | 2SK1374 | IPD30N12S3L-31



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