Справочник MOSFET. FQB8N25TM

 

FQB8N25TM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQB8N25TM
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 87 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 12 nC
   trⓘ - Время нарастания: 95 ns
   Cossⓘ - Выходная емкость: 85 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.55 Ohm
   Тип корпуса: D2-PAK

 Аналог (замена) для FQB8N25TM

 

 

FQB8N25TM Datasheet (PDF)

 ..1. Size:594K  fairchild semi
 fqb8n25tm.pdf

FQB8N25TM FQB8N25TM

May 2000TMQFETQFETQFETQFETFQB8N25 / FQI8N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.0A, 250V, RDS(on) = 0.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has

 9.1. Size:1032K  fairchild semi
 fqb8n60cf fqb8n60cftm.pdf

FQB8N25TM FQB8N25TM

October 2008TMQFETFQB8N60CF600V N-Channel MOSFETFeatures Description 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 28nC)DMOS technology. Low Crss ( typical 12pF)This advanced technology has been especially tailored to

 9.2. Size:965K  fairchild semi
 fqb8n60c fqi8n60c fqi8n60ctu.pdf

FQB8N25TM FQB8N25TM

October 2008QFETFQB8N60C / FQI8N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especiall

 9.3. Size:430K  fairchild semi
 fqb8n90ctm.pdf

FQB8N25TM FQB8N25TM

December 2013FQB8N90CN-Channel QFET MOSFET900 V, 6.3 A, 1.9 Description FeaturesThese N-Channel enhancement mode power field effect 6.3 A, 900 V, RDS(on) = 1.9 (Max.) @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, planar Low Gate Charge (Typ. 35 nC)stripe, DMOS technology. This advanced technology has been Low Crss (Typ. 12 pF)especia

 9.4. Size:754K  onsemi
 fqb8n60c fqi8n60c.pdf

FQB8N25TM FQB8N25TM

FQB8N60C / FQI8N60CN-Channel QFET MOSFET600 V, 7.5 A, 1.2 Features 7.5 A, 600 V, RDS(on) = 1.2 (Max.) @ VGS = 10 V,ID = 3.75 ADescription Low Gate Charge (Typ. 28 nC)This N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar Low Crss (Typ. 12 pF)stripe and DMOS technology. This advanced MOSFET technology has

 9.5. Size:538K  onsemi
 fqb8n90c.pdf

FQB8N25TM FQB8N25TM

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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