FQB9P25TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQB9P25TM
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 29 nC
   trⓘ - Tiempo de subida: 150 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.62 Ohm
   Paquete / Cubierta: D2-PAK

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FQB9P25TM Datasheet (PDF)

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fqb9p25tm.pdf

October 2008QFETFQB9P25 / FQI9P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -9.4A, -250V, RDS(on) = 0.62 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 27 pF)This advanced technology is especially ta

7.1. Size:734K fairchild semi
fqb9p25.pdf

November 2013FQB9P25P-Channel QFET MOSFET-250 V, -9.4 A, 620 m Description FeaturesThese P-Channel enhancement mode power field effect -9.4 A, -250 V, RDS(on) = 620 m (Max.) @ VGS = -10 V,transistors are produced using Fairchilds proprietary, ID = -4.7 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 29 nC)technology is especially tailore

7.2. Size:867K onsemi
fqb9p25.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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