FQB9P25TM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQB9P25TM

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 9.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 150 nS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.62 Ohm

Encapsulados: D2-PAK

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FQB9P25TM datasheet

 ..1. Size:901K  fairchild semi
 fqb9p25tm.pdf pdf_icon

FQB9P25TM

October 2008 QFET FQB9P25 / FQI9P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -9.4A, -250V, RDS(on) = 0.62 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology is especially ta

 7.1. Size:734K  fairchild semi
 fqb9p25.pdf pdf_icon

FQB9P25TM

November 2013 FQB9P25 P-Channel QFET MOSFET -250 V, -9.4 A, 620 m Description Features These P-Channel enhancement mode power field effect -9.4 A, -250 V, RDS(on) = 620 m (Max.) @ VGS = -10 V, transistors are produced using Fairchild s proprietary, ID = -4.7 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 29 nC) technology is especially tailore

 7.2. Size:867K  onsemi
 fqb9p25.pdf pdf_icon

FQB9P25TM

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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