FQB9P25TM. Аналоги и основные параметры
Наименование производителя: FQB9P25TM
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 120 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 250 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 9.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 150 ns
Cossⓘ - Выходная емкость: 170 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.62 Ohm
Тип корпуса: D2-PAK
Аналог (замена) для FQB9P25TM
- подборⓘ MOSFET транзистора по параметрам
FQB9P25TM даташит
fqb9p25tm.pdf
October 2008 QFET FQB9P25 / FQI9P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -9.4A, -250V, RDS(on) = 0.62 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology is especially ta
fqb9p25.pdf
November 2013 FQB9P25 P-Channel QFET MOSFET -250 V, -9.4 A, 620 m Description Features These P-Channel enhancement mode power field effect -9.4 A, -250 V, RDS(on) = 620 m (Max.) @ VGS = -10 V, transistors are produced using Fairchild s proprietary, ID = -4.7 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 29 nC) technology is especially tailore
fqb9p25.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие IGBT... FQB9N08LTM, FQB9N08TM, FQB9N15TM, FQB9N25CTM, FQB9N25TM, FQB9N50CFTM, FQB9N50CTM, FQB9N50TM, IRFZ24N, FQD10N20CTF, FQD10N20CTM, FQD10N20LTF, FQD10N20LTM, FQD10N20TF, FQD10N20TM, FQD11P06TF, FQD11P06TM
History: IPB055N03L | IPA60R099P6
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