FQD12N20LTF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQD12N20LTF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 55 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 16 nC
   trⓘ - Tiempo de subida: 190 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
   Paquete / Cubierta: D-PAK

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FQD12N20LTF Datasheet (PDF)

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fqd12n20ltf fqd12n20ltm fqd12n20l fqu12n20l.pdf

January 2009QFETFQD12N20L / FQU12N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been

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fqd12n20ltm f085.pdf

June 2010FQD12N20LTM_F085 200V Logic Level N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especiall

5.1. Size:1315K onsemi
fqd12n20l.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

6.1. Size:801K fairchild semi
fqd12n20tf fqd12n20tm fqd12n20 fqu12n20 fqu12n20tu.pdf

January 2009QFETFQD12N20 / FQU12N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18 nC)planar stripe, DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especia

6.2. Size:905K cn vbsemi
fqd12n20.pdf

FQD12N20www.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.245 at VGS = 10 V 10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATING

Otros transistores... FQD10N20CTF , FQD10N20CTM , FQD10N20LTF , FQD10N20LTM , FQD10N20TF , FQD10N20TM , FQD11P06TF , FQD11P06TM , HY1906P , FQD12N20LTM , FQD12N20TF , FQD12N20TM , FQD12P10TF , FQD12P10TM , FQD13N06LTF , FQD13N06LTM , FQD13N06TF .

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