All MOSFET. FQD12N20LTF Datasheet

 

FQD12N20LTF MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD12N20LTF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 55 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 16 nC

Rise Time (tr): 190 nS

Drain-Source Capacitance (Cd): 120 pF

Maximum Drain-Source On-State Resistance (Rds): 0.28 Ohm

Package: D-PAK

FQD12N20LTF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD12N20LTF Datasheet (PDF)

1.1. fqd12n20ltm f085.pdf Size:640K _fairchild_semi

FQD12N20LTF
FQD12N20LTF

June 2010 FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been especiall

1.2. fqd12n20ltf fqd12n20ltm fqd12n20l fqu12n20l.pdf Size:699K _fairchild_semi

FQD12N20LTF
FQD12N20LTF

January 2009 QFET® FQD12N20L / FQU12N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been

 2.1. fqd12n20tf fqd12n20tm fqd12n20 fqu12n20 fqu12n20tu.pdf Size:801K _fairchild_semi

FQD12N20LTF
FQD12N20LTF

January 2009 QFET® FQD12N20 / FQU12N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18 nC) planar stripe, DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been especia

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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