FQD12N20TM Todos los transistores

 

FQD12N20TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQD12N20TM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 55 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 9 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 18 nC

Tiempo de elevación (tr): 120 nS

Conductancia de drenaje-sustrato (Cd): 125 pF

Resistencia drenaje-fuente RDS(on): 0.28 Ohm

Empaquetado / Estuche: D-PAK

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FQD12N20TM Datasheet (PDF)

1.1. fqd12n20tf fqd12n20tm fqd12n20 fqu12n20 fqu12n20tu.pdf Size:801K _fairchild_semi

FQD12N20TM
FQD12N20TM

January 2009 QFET® FQD12N20 / FQU12N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18 nC) planar stripe, DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been especia

2.1. fqd12n20ltm f085.pdf Size:640K _fairchild_semi

FQD12N20TM
FQD12N20TM

June 2010 FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been especiall

2.2. fqd12n20ltf fqd12n20ltm fqd12n20l fqu12n20l.pdf Size:699K _fairchild_semi

FQD12N20TM
FQD12N20TM

January 2009 QFET® FQD12N20L / FQU12N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been

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