FQD17P06TF Todos los transistores

 

FQD17P06TF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQD17P06TF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 325 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm
   Paquete / Cubierta: D-PAK
 

 Búsqueda de reemplazo de FQD17P06TF MOSFET

   - Selección ⓘ de transistores por parámetros

 

FQD17P06TF Datasheet (PDF)

 ..1. Size:804K  fairchild semi
 fqd17p06tf fqd17p06tm fqu17p06tu.pdf pdf_icon

FQD17P06TF

January 2009QFETFQD17P06 / FQU17P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.135 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especia

 6.1. Size:721K  fairchild semi
 fqd17p06 fqu17p06.pdf pdf_icon

FQD17P06TF

January 2009QFETFQD17P06 / FQU17P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.135 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especia

 9.1. Size:555K  fairchild semi
 fqd17n08l fqu17n08l.pdf pdf_icon

FQD17P06TF

December 2000TMQFETQFETQFETQFETFQD17N08L / FQU17N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.9A, 80V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC)planar stripe, DMOS technology. Low Crss ( typical 29 pF)This advanced

 9.2. Size:554K  fairchild semi
 fqd17n08ltf fqd17n08ltm.pdf pdf_icon

FQD17P06TF

December 2000TMQFETQFETQFETQFETFQD17N08L / FQU17N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.9A, 80V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC)planar stripe, DMOS technology. Low Crss ( typical 29 pF)This advanced

MOSTRAR MÁS

Otros transistores... FQD13N06TF , FQD13N06TM , FQD13N10TF , FQD13N10TM , FQD14N15TM , FQD16N15TM , FQD17N08LTF , FQD17N08LTM , AO4468 , FQD17P06TM , FQD18N20V2TF , FQD18N20V2TM , FQD19N10LTF , FQD19N10LTM , FQD19N10TF , FQD19N10TM , FQD1N50TF .

 

 
Back to Top

 


FQD17P06TF   FQD17P06TF   FQD17P06TF  

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AGM60P20R | AGM60P20D | AGM60P20AP | AGM60P14D | AGM60P14AP | AGM60P14A | AGM60P100A | AGM60P06S | AGM609S | AGM609MNA | AGM609F | AGM609D | AGM609C | AGM609AP | AGM40P26S | AGM40P26E

 

 

 
Back to Top

 

Popular searches

2sa1306 | b817 transistor | 2n3394 | 2sb688 | 2sd551 | ac128 datasheet | 2n5496 | 2sb600

 


 
.