Справочник MOSFET. FQD17P06TF

 

FQD17P06TF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQD17P06TF
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 44 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 100 ns
   Cossⓘ - Выходная емкость: 325 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.135 Ohm
   Тип корпуса: D-PAK
 

 Аналог (замена) для FQD17P06TF

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQD17P06TF Datasheet (PDF)

 ..1. Size:804K  fairchild semi
 fqd17p06tf fqd17p06tm fqu17p06tu.pdf pdf_icon

FQD17P06TF

January 2009QFETFQD17P06 / FQU17P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.135 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especia

 6.1. Size:721K  fairchild semi
 fqd17p06 fqu17p06.pdf pdf_icon

FQD17P06TF

January 2009QFETFQD17P06 / FQU17P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.135 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especia

 9.1. Size:555K  fairchild semi
 fqd17n08l fqu17n08l.pdf pdf_icon

FQD17P06TF

December 2000TMQFETQFETQFETQFETFQD17N08L / FQU17N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.9A, 80V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC)planar stripe, DMOS technology. Low Crss ( typical 29 pF)This advanced

 9.2. Size:554K  fairchild semi
 fqd17n08ltf fqd17n08ltm.pdf pdf_icon

FQD17P06TF

December 2000TMQFETQFETQFETQFETFQD17N08L / FQU17N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.9A, 80V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC)planar stripe, DMOS technology. Low Crss ( typical 29 pF)This advanced

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FQD13N06TF , FQD13N06TM , FQD13N10TF , FQD13N10TM , FQD14N15TM , FQD16N15TM , FQD17N08LTF , FQD17N08LTM , IRFP064N , FQD17P06TM , FQD18N20V2TF , FQD18N20V2TM , FQD19N10LTF , FQD19N10LTM , FQD19N10TF , FQD19N10TM , FQD1N50TF .

History: IRFSL4228PBF

 

 
Back to Top

 


 
.