FQD17P06TM Todos los transistores

 

FQD17P06TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQD17P06TM
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 325 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm
   Paquete / Cubierta: D-PAK
 

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FQD17P06TM Datasheet (PDF)

 ..1. Size:804K  fairchild semi
 fqd17p06tf fqd17p06tm fqu17p06tu.pdf pdf_icon

FQD17P06TM

January 2009QFETFQD17P06 / FQU17P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.135 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especia

 6.1. Size:721K  fairchild semi
 fqd17p06 fqu17p06.pdf pdf_icon

FQD17P06TM

January 2009QFETFQD17P06 / FQU17P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.135 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especia

 9.1. Size:555K  fairchild semi
 fqd17n08l fqu17n08l.pdf pdf_icon

FQD17P06TM

December 2000TMQFETQFETQFETQFETFQD17N08L / FQU17N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.9A, 80V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC)planar stripe, DMOS technology. Low Crss ( typical 29 pF)This advanced

 9.2. Size:554K  fairchild semi
 fqd17n08ltf fqd17n08ltm.pdf pdf_icon

FQD17P06TM

December 2000TMQFETQFETQFETQFETFQD17N08L / FQU17N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.9A, 80V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC)planar stripe, DMOS technology. Low Crss ( typical 29 pF)This advanced

MOSTRAR MÁS

Otros transistores... FQD13N06TM , FQD13N10TF , FQD13N10TM , FQD14N15TM , FQD16N15TM , FQD17N08LTF , FQD17N08LTM , FQD17P06TF , BS170 , FQD18N20V2TF , FQD18N20V2TM , FQD19N10LTF , FQD19N10LTM , FQD19N10TF , FQD19N10TM , FQD1N50TF , FQD1N50TM .

History: CSN03N2P2 | TSM3404CX | HTM150A02

 

 
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