Справочник MOSFET. FQD17P06TM

 

FQD17P06TM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQD17P06TM
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 44 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 21 nC
   trⓘ - Время нарастания: 100 ns
   Cossⓘ - Выходная емкость: 325 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.135 Ohm
   Тип корпуса: D-PAK

 Аналог (замена) для FQD17P06TM

 

 

FQD17P06TM Datasheet (PDF)

 ..1. Size:804K  fairchild semi
 fqd17p06tf fqd17p06tm fqu17p06tu.pdf

FQD17P06TM FQD17P06TM

January 2009QFETFQD17P06 / FQU17P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.135 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especia

 6.1. Size:721K  fairchild semi
 fqd17p06 fqu17p06.pdf

FQD17P06TM FQD17P06TM

January 2009QFETFQD17P06 / FQU17P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.135 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especia

 9.1. Size:555K  fairchild semi
 fqd17n08l fqu17n08l.pdf

FQD17P06TM FQD17P06TM

December 2000TMQFETQFETQFETQFETFQD17N08L / FQU17N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.9A, 80V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC)planar stripe, DMOS technology. Low Crss ( typical 29 pF)This advanced

 9.2. Size:554K  fairchild semi
 fqd17n08ltf fqd17n08ltm.pdf

FQD17P06TM FQD17P06TM

December 2000TMQFETQFETQFETQFETFQD17N08L / FQU17N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.9A, 80V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC)planar stripe, DMOS technology. Low Crss ( typical 29 pF)This advanced

 9.3. Size:1378K  onsemi
 fqd17n08l.pdf

FQD17P06TM FQD17P06TM

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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