FQD1N50TF Todos los transistores

 

FQD1N50TF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQD1N50TF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 9 Ohm
   Paquete / Cubierta: D-PAK
     - Selección de transistores por parámetros

 

FQD1N50TF Datasheet (PDF)

 ..1. Size:827K  fairchild semi
fqd1n50tf fqd1n50tm fqu1n50tu.pdf pdf_icon

FQD1N50TF

January 2009QFETFQD1N50 / FQU1N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.1A, 500V, RDS(on) = 9.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has been especia

 9.1. Size:541K  fairchild semi
fqd1n60tf fqd1n60tm fqu1n60tu.pdf pdf_icon

FQD1N50TF

April 2000TMQFETQFETQFETQFETFQD1N60 / FQU1N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology

 9.2. Size:731K  fairchild semi
fqd1n80tf fqd1n80tm fqd1n80 fqu1n80 fqu1n80tu.pdf pdf_icon

FQD1N50TF

January 2009QFETFQD1N80 / FQU1N80 800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 800V, RDS(on) = 20 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5nC)planar stripe, DMOS technology. Low Crss ( typical 2.7pF)This advanced technology has been especially

 9.3. Size:543K  fairchild semi
fqd1n60 fqu1n60.pdf pdf_icon

FQD1N50TF

April 2000TMQFETQFETQFETQFETFQD1N60 / FQU1N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: G11 | CEF05N6 | AUIRF7734M2 | AM2336N-T1 | DMP1096UCB4 | SMOS44N80

 

 
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