FQD1N50TF Todos los transistores

 

FQD1N50TF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQD1N50TF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 25 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 1.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 4 nC

Tiempo de elevación (tr): 25 nS

Conductancia de drenaje-sustrato (Cd): 20 pF

Resistencia drenaje-fuente RDS(on): 9 Ohm

Empaquetado / Estuche: D-PAK

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FQD1N50TF Datasheet (PDF)

1.1. fqd1n50tf fqd1n50tm.pdf Size:827K _fairchild_semi

FQD1N50TF
FQD1N50TF

January 2009 QFET® FQD1N50 / FQU1N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 1.1A, 500V, RDS(on) = 9.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technology has been especia

5.1. fqd1n60ctf fqd1n60ctm.pdf Size:752K _fairchild_semi

FQD1N50TF
FQD1N50TF

January 2009 QFET® FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1A, 600V, RDS(on) = 11.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8nC) planar stripe, DMOS technology. • Low Crss ( typical 3.5 pF) This advanced technology has been especiall

5.2. fqd1n60 fqu1n60.pdf Size:543K _fairchild_semi

FQD1N50TF
FQD1N50TF

April 2000 TM QFET QFET QFET QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has been esp

 5.3. fqd1n60tf fqd1n60tm.pdf Size:541K _fairchild_semi

FQD1N50TF
FQD1N50TF

April 2000 TM QFET QFET QFET QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.0A, 600V, RDS(on) = 11.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technology

5.4. fqd1n80 fqu1n80.pdf Size:731K _fairchild_semi

FQD1N50TF
FQD1N50TF

January 2009 QFET FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 800V, RDS(on) = 20? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5nC) planar stripe, DMOS technology. Low Crss ( typical 2.7pF) This advanced technology has been especially tailored to

 5.5. fqd1n60c fqu1n60c.pdf Size:752K _fairchild_semi

FQD1N50TF
FQD1N50TF

January 2009 QFET FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1A, 600V, RDS(on) = 11.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8nC) planar stripe, DMOS technology. Low Crss ( typical 3.5 pF) This advanced technology has been especially tailored to

5.6. fqd1n80tf fqd1n80tm.pdf Size:731K _fairchild_semi

FQD1N50TF
FQD1N50TF

January 2009 QFET® FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.0A, 800V, RDS(on) = 20Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.5nC) planar stripe, DMOS technology. • Low Crss ( typical 2.7pF) This advanced technology has been especially

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