FQD1N50TF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQD1N50TF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 1.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 20 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 9 Ohm
Paquete / Cubierta: D-PAK
Búsqueda de reemplazo de FQD1N50TF MOSFET
FQD1N50TF PDF Specs
fqd1n50tf fqd1n50tm fqu1n50tu.pdf
January 2009 QFET FQD1N50 / FQU1N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.1A, 500V, RDS(on) = 9.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has been especia... See More ⇒
fqd1n60tf fqd1n60tm fqu1n60tu.pdf
April 2000 TM QFET QFET QFET QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology... See More ⇒
fqd1n80tf fqd1n80tm fqd1n80 fqu1n80 fqu1n80tu.pdf
January 2009 QFET FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 800V, RDS(on) = 20 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.5nC) planar stripe, DMOS technology. Low Crss ( typical 2.7pF) This advanced technology has been especially ... See More ⇒
fqd1n60 fqu1n60.pdf
April 2000 TM QFET QFET QFET QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology... See More ⇒
Otros transistores... FQD17P06TF , FQD17P06TM , FQD18N20V2TF , FQD18N20V2TM , FQD19N10LTF , FQD19N10LTM , FQD19N10TF , FQD19N10TM , IRF540 , FQD1N50TM , FQD1N60CTF , FQD1N60CTM , FQD1N60TF , FQD1N60TM , FQD1N80TF , FQD1N80TM , FQD1P50TF .
Liste
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