FQD1N50TF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FQD1N50TF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.1 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 25 ns
Cossⓘ - Выходная емкость: 20 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 9 Ohm
Тип корпуса: D-PAK
Аналог (замена) для FQD1N50TF
FQD1N50TF Datasheet (PDF)
fqd1n50tf fqd1n50tm fqu1n50tu.pdf

January 2009QFETFQD1N50 / FQU1N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.1A, 500V, RDS(on) = 9.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has been especia
fqd1n60tf fqd1n60tm fqu1n60tu.pdf

April 2000TMQFETQFETQFETQFETFQD1N60 / FQU1N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology
fqd1n80tf fqd1n80tm fqd1n80 fqu1n80 fqu1n80tu.pdf

January 2009QFETFQD1N80 / FQU1N80 800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 800V, RDS(on) = 20 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5nC)planar stripe, DMOS technology. Low Crss ( typical 2.7pF)This advanced technology has been especially
fqd1n60 fqu1n60.pdf

April 2000TMQFETQFETQFETQFETFQD1N60 / FQU1N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology
Другие MOSFET... FQD17P06TF , FQD17P06TM , FQD18N20V2TF , FQD18N20V2TM , FQD19N10LTF , FQD19N10LTM , FQD19N10TF , FQD19N10TM , IRF540N , FQD1N50TM , FQD1N60CTF , FQD1N60CTM , FQD1N60TF , FQD1N60TM , FQD1N80TF , FQD1N80TM , FQD1P50TF .
History: AOE6930 | SVF7N65CDTR | TSM301K12CQ
History: AOE6930 | SVF7N65CDTR | TSM301K12CQ



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