FQD2P40TM Todos los transistores

 

FQD2P40TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQD2P40TM
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1.56 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6.5 Ohm
   Paquete / Cubierta: D-PAK
     - Selección de transistores por parámetros

 

FQD2P40TM Datasheet (PDF)

 ..1. Size:640K  fairchild semi
 fqd2p40tf fqd2p40tm fqd2p40 fqu2p40.pdf pdf_icon

FQD2P40TM

October 2008QFETFQD2P40 / FQU2P40400V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -1.56A, -400V, RDS(on) = 6.5 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology is especially t

 7.1. Size:864K  onsemi
 fqd2p40.pdf pdf_icon

FQD2P40TM

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AS2303 | MTN50N06E3 | IPI051N15N5 | BSS138BKW | SM3116NAF | CPC3730 | SSFT4004

 

 
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