All MOSFET. FQD2P40TM Datasheet

 

FQD2P40TM Datasheet and Replacement


   Type Designator: FQD2P40TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.56 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
   Package: D-PAK
 

 FQD2P40TM substitution

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FQD2P40TM Datasheet (PDF)

 ..1. Size:640K  fairchild semi
 fqd2p40tf fqd2p40tm fqd2p40 fqu2p40.pdf pdf_icon

FQD2P40TM

October 2008QFETFQD2P40 / FQU2P40400V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -1.56A, -400V, RDS(on) = 6.5 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology is especially t

 7.1. Size:864K  onsemi
 fqd2p40.pdf pdf_icon

FQD2P40TM

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FQD2N50TM , FQD2N60TF , FQD2N60TM , FQD2N80TF , FQD2N80TM , FQD2N90TF , FQD2N90TM , FQD2P40TF , 5N60 , FQD30N06LTF , FQD30N06LTM , FQD30N06TF , FQD30N06TM , FQD3N30TF , FQD3N30TM , FQD3N40TM , FQD3N50CTF .

History: IRFSL3107PBF | AON6206

Keywords - FQD2P40TM MOSFET datasheet

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