FQD3N50CTF Todos los transistores

 

FQD3N50CTF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQD3N50CTF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: D-PAK
     - Selección de transistores por parámetros

 

FQD3N50CTF Datasheet (PDF)

 ..1. Size:812K  fairchild semi
 fqd3n50ctf.pdf pdf_icon

FQD3N50CTF

March 2008 QFETFQD3N50C / FQU3N50C500V N-Channel MOSFETFeatures Description 2.5A, 500V, RDS(on) = 2.5 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 8.5pF)This advanced technology has been especially tai

 6.1. Size:927K  fairchild semi
 fqd3n50c fqu3n50c.pdf pdf_icon

FQD3N50CTF

March 2008 QFETFQD3N50C / FQU3N50C500V N-Channel MOSFETFeatures Description 2.5A, 500V, RDS(on) = 2.5 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 8.5pF)This advanced technology has been especially tai

 9.1. Size:575K  fairchild semi
 fqd3n60 fqu3n60.pdf pdf_icon

FQD3N50CTF

April 2000TMQFETQFETQFETQFETFQD3N60 / FQU3N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology h

 9.2. Size:737K  fairchild semi
 fqd3n30tf fqd3n30tm.pdf pdf_icon

FQD3N50CTF

April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 300V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AO8803 | SSF3641 | KP771A | 2N7121 | FDC3612

 

 
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