All MOSFET. FQD3N50CTF Datasheet

 

FQD3N50CTF Datasheet and Replacement


   Type Designator: FQD3N50CTF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: D-PAK
 

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FQD3N50CTF Datasheet (PDF)

 ..1. Size:812K  fairchild semi
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FQD3N50CTF

March 2008 QFETFQD3N50C / FQU3N50C500V N-Channel MOSFETFeatures Description 2.5A, 500V, RDS(on) = 2.5 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 8.5pF)This advanced technology has been especially tai

 6.1. Size:927K  fairchild semi
fqd3n50c fqu3n50c.pdf pdf_icon

FQD3N50CTF

March 2008 QFETFQD3N50C / FQU3N50C500V N-Channel MOSFETFeatures Description 2.5A, 500V, RDS(on) = 2.5 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 8.5pF)This advanced technology has been especially tai

 9.1. Size:575K  fairchild semi
fqd3n60 fqu3n60.pdf pdf_icon

FQD3N50CTF

April 2000TMQFETQFETQFETQFETFQD3N60 / FQU3N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology h

 9.2. Size:737K  fairchild semi
fqd3n30tf fqd3n30tm.pdf pdf_icon

FQD3N50CTF

April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 300V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

Datasheet: FQD2P40TM , FQD30N06LTF , FQD30N06LTM , FQD30N06TF , FQD30N06TM , FQD3N30TF , FQD3N30TM , FQD3N40TM , TK10A60D , FQD3N50CTM , FQD3N60TM , FQD3P20TF , FQD3P20TM , FQD3P50TF , FQD3P50TM , FQD4N20LTM , FQD4N20TF .

History: HTJ600N06 | AOB11C60 | CTD06N7P5 | IXFH52N50P2 | FQD1N50TM | EM6K1 | IXTH3N100P

Keywords - FQD3N50CTF MOSFET datasheet

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