FQD3P20TM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQD3P20TM

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 37 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 45 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.7 Ohm

Encapsulados: D-PAK

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FQD3P20TM datasheet

 ..1. Size:547K  fairchild semi
 fqd3p20tf fqd3p20tm fqu3p20tu.pdf pdf_icon

FQD3P20TM

April 2000 TM QFET QFET QFET QFET FQD3P20 / FQU3P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.4A, -200V, RDS(on) = 2.7 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technolo

 9.1. Size:761K  fairchild semi
 fqd3p50tf fqd3p50tm fqd3p50 fqu3p50 fqu3p50tu.pdf pdf_icon

FQD3P20TM

January 2009 QFET FQD3P50 / FQU3P50 500V P-Channel MOSFET Features General Description -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 18 nC) transistors are produced using Fairchild s proprietary, Low Crss ( typical 9.5 pF) planar stripe, DMOS technology. This advanced technology has been espe

 9.2. Size:1089K  fairchild semi
 fqd3p50tm f085.pdf pdf_icon

FQD3P20TM

November 2010 FQD3P50TM_F085 500V P-Channel MOSFET Features General Description -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 18 nC) transistors are produced using Fairchild s proprietary, Low Crss ( typical 9.5 pF) planar stripe, DMOS technology. This advanced technology has been especially tai

 9.3. Size:598K  onsemi
 fqd3p50.pdf pdf_icon

FQD3P20TM

FQD3P50 P-Channel QFET MOSFET - 500 V, - 2.1 A, 4.9 Features - 2.1 A, - 500 V, RDS(on) = 4.9 (Max.) @ VGS = - 10 V, Description ID = - 1.05 A This P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 18 nC) produced using ON Semiconductor s proprietary Low Crss (Typ. 9.5 pF) planar stripe and DMOS technology. This advanced MOSFET technology has

MOSTRAR MÁS

Otros transistores... FQD30N06TM, FQD3N30TF, FQD3N30TM, FQD3N40TM, FQD3N50CTF, FQD3N50CTM, FQD3N60TM, FQD3P20TF, IRF1010E, FQD3P50TF, FQD3P50TM, FQD4N20LTM, FQD4N20TF, FQD4N25TF, FQD4N25TM, FQD4N50TF, FQD4N50TM