FQD3P20TM Specs and Replacement

Type Designator: FQD3P20TM

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: D-PAK

FQD3P20TM substitution

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FQD3P20TM datasheet

 ..1. Size:547K  fairchild semi
 fqd3p20tf fqd3p20tm fqu3p20tu.pdf pdf_icon

FQD3P20TM

April 2000 TM QFET QFET QFET QFET FQD3P20 / FQU3P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.4A, -200V, RDS(on) = 2.7 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technolo... See More ⇒

 9.1. Size:761K  fairchild semi
 fqd3p50tf fqd3p50tm fqd3p50 fqu3p50 fqu3p50tu.pdf pdf_icon

FQD3P20TM

January 2009 QFET FQD3P50 / FQU3P50 500V P-Channel MOSFET Features General Description -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 18 nC) transistors are produced using Fairchild s proprietary, Low Crss ( typical 9.5 pF) planar stripe, DMOS technology. This advanced technology has been espe... See More ⇒

 9.2. Size:1089K  fairchild semi
 fqd3p50tm f085.pdf pdf_icon

FQD3P20TM

November 2010 FQD3P50TM_F085 500V P-Channel MOSFET Features General Description -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 18 nC) transistors are produced using Fairchild s proprietary, Low Crss ( typical 9.5 pF) planar stripe, DMOS technology. This advanced technology has been especially tai... See More ⇒

 9.3. Size:598K  onsemi
 fqd3p50.pdf pdf_icon

FQD3P20TM

FQD3P50 P-Channel QFET MOSFET - 500 V, - 2.1 A, 4.9 Features - 2.1 A, - 500 V, RDS(on) = 4.9 (Max.) @ VGS = - 10 V, Description ID = - 1.05 A This P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 18 nC) produced using ON Semiconductor s proprietary Low Crss (Typ. 9.5 pF) planar stripe and DMOS technology. This advanced MOSFET technology has... See More ⇒

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Detailed specifications: FQD30N06TM, FQD3N30TF, FQD3N30TM, FQD3N40TM, FQD3N50CTF, FQD3N50CTM, FQD3N60TM, FQD3P20TF, IRF1010E, FQD3P50TF, FQD3P50TM, FQD4N20LTM, FQD4N20TF, FQD4N25TF, FQD4N25TM, FQD4N50TF, FQD4N50TM

Keywords - FQD3P20TM MOSFET specs

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