FQD3P50TF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FQD3P50TF Datasheet (PDF)

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January 2009QFETFQD3P50 / FQU3P50500V P-Channel MOSFETFeaturesGeneral Description -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 VThese P-Channel enhancement mode power field effect Low gate charge ( typical 18 nC)transistors are produced using Fairchilds proprietary, Low Crss ( typical 9.5 pF)planar stripe, DMOS technology.This advanced technology has been espe

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November 2010FQD3P50TM_F085500V P-Channel MOSFETFeaturesGeneral Description -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 VThese P-Channel enhancement mode power field effect Low gate charge ( typical 18 nC)transistors are produced using Fairchilds proprietary, Low Crss ( typical 9.5 pF)planar stripe, DMOS technology.This advanced technology has been especially tai

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FQD3P50 P-Channel QFET MOSFET- 500 V, - 2.1 A, 4.9 Features - 2.1 A, - 500 V, RDS(on) = 4.9 (Max.) @ VGS = - 10 V,DescriptionID = - 1.05 AThis P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 18 nC)produced using ON Semiconductors proprietary Low Crss (Typ. 9.5 pF)planar stripe and DMOS technology. This advanced MOSFET technology has

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April 2000TMQFETQFETQFETQFETFQD3P20 / FQU3P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.4A, -200V, RDS(on) = 2.7 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technolo

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