All MOSFET. FQD3P50TF Datasheet

 

FQD3P50TF Datasheet and Replacement


   Type Designator: FQD3P50TF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.9 Ohm
   Package: D-PAK
 

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FQD3P50TF Datasheet (PDF)

 ..1. Size:761K  fairchild semi
 fqd3p50tf fqd3p50tm fqd3p50 fqu3p50 fqu3p50tu.pdf pdf_icon

FQD3P50TF

January 2009QFETFQD3P50 / FQU3P50500V P-Channel MOSFETFeaturesGeneral Description -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 VThese P-Channel enhancement mode power field effect Low gate charge ( typical 18 nC)transistors are produced using Fairchilds proprietary, Low Crss ( typical 9.5 pF)planar stripe, DMOS technology.This advanced technology has been espe

 6.1. Size:1089K  fairchild semi
 fqd3p50tm f085.pdf pdf_icon

FQD3P50TF

November 2010FQD3P50TM_F085500V P-Channel MOSFETFeaturesGeneral Description -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 VThese P-Channel enhancement mode power field effect Low gate charge ( typical 18 nC)transistors are produced using Fairchilds proprietary, Low Crss ( typical 9.5 pF)planar stripe, DMOS technology.This advanced technology has been especially tai

 7.1. Size:598K  onsemi
 fqd3p50.pdf pdf_icon

FQD3P50TF

FQD3P50 P-Channel QFET MOSFET- 500 V, - 2.1 A, 4.9 Features - 2.1 A, - 500 V, RDS(on) = 4.9 (Max.) @ VGS = - 10 V,DescriptionID = - 1.05 AThis P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 18 nC)produced using ON Semiconductors proprietary Low Crss (Typ. 9.5 pF)planar stripe and DMOS technology. This advanced MOSFET technology has

 9.1. Size:547K  fairchild semi
 fqd3p20tf fqd3p20tm fqu3p20tu.pdf pdf_icon

FQD3P50TF

April 2000TMQFETQFETQFETQFETFQD3P20 / FQU3P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.4A, -200V, RDS(on) = 2.7 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technolo

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Datasheet: FQD3N30TF , FQD3N30TM , FQD3N40TM , FQD3N50CTF , FQD3N50CTM , FQD3N60TM , FQD3P20TF , FQD3P20TM , IRFB3607 , FQD3P50TM , FQD4N20LTM , FQD4N20TF , FQD4N25TF , FQD4N25TM , FQD4N50TF , FQD4N50TM , FQD4P25TF .

History: AMA433P

Keywords - FQD3P50TF MOSFET datasheet

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