FQD4N20LTM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQD4N20LTM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 36 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.35 Ohm
   Paquete / Cubierta: D-PAK

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FQD4N20LTM Datasheet (PDF)

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fqd4n20ltm.pdf

December 2000TMQFETQFETQFETQFETFQD4N20L / FQU4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.2A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced

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fqd4n20tf fqd4n20 fqu4n20 fqu4n20tu.pdf

January 2009QFETFQD4N20 / FQU4N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology has been especial

7.2. Size:954K onsemi
fqd4n20.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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fqd4n25 fqu4n25.pdf

May 2000TMQFETQFETQFETQFETFQD4N25 / FQU4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology

8.2. Size:717K fairchild semi
fqd4n25tf fqd4n25tm fqu4n25tu.pdf

8.3. Size:822K onsemi
fqd4n25.pdf

FQD4N25N-Channel QFET MOSFET250 V, 3 A, 1.75 Features 3 A, 250 V, RDS(on) = 1.75 (Max.) @ VGS = 10 V,DescriptionID = 1.5 AThis N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar Low Gate Charge (Typ. 4.3 nC)stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 4.8 pF)technology has been especially

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