All MOSFET. FQD4N20LTM Datasheet

 

FQD4N20LTM MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD4N20LTM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 3.2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 4 nC

Rise Time (tr): 70 nS

Drain-Source Capacitance (Cd): 36 pF

Maximum Drain-Source On-State Resistance (Rds): 1.35 Ohm

Package: D-PAK

FQD4N20LTM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD4N20LTM Datasheet (PDF)

0.1. fqd4n20ltm.pdf Size:521K _fairchild_semi

FQD4N20LTM
FQD4N20LTM

December 2000 TM QFET QFET QFET QFET FQD4N20L / FQU4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.2A, 200V, RDS(on) = 1.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced

7.1. fqd4n20tf fqd4n20 fqu4n20 fqu4n20tu.pdf Size:819K _fairchild_semi

FQD4N20LTM
FQD4N20LTM

January 2009 QFET® FQD4N20 / FQU4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.0A, 200V, RDS(on) = 1.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology has been especial

 8.1. fqd4n25tf fqd4n25tm fqu4n25tu.pdf Size:717K _fairchild_semi

FQD4N20LTM
FQD4N20LTM

May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.0A, 250V, RDS(on) = 1.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.8 pF) This advanced technology

8.2. fqd4n25 fqu4n25.pdf Size:722K _fairchild_semi

FQD4N20LTM
FQD4N20LTM

May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.0A, 250V, RDS(on) = 1.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.8 pF) This advanced technology

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top