FQD4N25TM Todos los transistores

 

FQD4N25TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQD4N25TM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.75 Ohm
   Paquete / Cubierta: D-PAK
     - Selección de transistores por parámetros

 

FQD4N25TM Datasheet (PDF)

 ..1. Size:717K  fairchild semi
 fqd4n25tf fqd4n25tm fqu4n25tu.pdf pdf_icon

FQD4N25TM

May 2000TMQFETQFETQFETQFETFQD4N25 / FQU4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology

 7.1. Size:722K  fairchild semi
 fqd4n25 fqu4n25.pdf pdf_icon

FQD4N25TM

May 2000TMQFETQFETQFETQFETFQD4N25 / FQU4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology

 7.2. Size:822K  onsemi
 fqd4n25.pdf pdf_icon

FQD4N25TM

FQD4N25N-Channel QFET MOSFET250 V, 3 A, 1.75 Features 3 A, 250 V, RDS(on) = 1.75 (Max.) @ VGS = 10 V,DescriptionID = 1.5 AThis N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar Low Gate Charge (Typ. 4.3 nC)stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 4.8 pF)technology has been especially

 8.1. Size:521K  fairchild semi
 fqd4n20ltm.pdf pdf_icon

FQD4N25TM

December 2000TMQFETQFETQFETQFETFQD4N20L / FQU4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.2A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced

MOSTRAR MÁS

Otros transistores... FQD3N60TM , FQD3P20TF , FQD3P20TM , FQD3P50TF , FQD3P50TM , FQD4N20LTM , FQD4N20TF , FQD4N25TF , IRFZ24N , FQD4N50TF , FQD4N50TM , FQD4P25TF , FQD4P25TM , FQD4P40 , FQD4P40TF , FQD4P40TM , FQD5N15TF .

History: FDMS2672 | SVF7N60CF | IRF7309IPBF | QS8K2 | WFY3N02 | APT904R2AN | SUP85N02-03

 

 
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