FQD4N25TM PDF and Equivalents Search

 

FQD4N25TM PDF Specs and Replacement


   Type Designator: FQD4N25TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.75 Ohm
   Package: D-PAK
 

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FQD4N25TM PDF Specs

 ..1. Size:717K  fairchild semi
 fqd4n25tf fqd4n25tm fqu4n25tu.pdf pdf_icon

FQD4N25TM

May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology ... See More ⇒

 7.1. Size:722K  fairchild semi
 fqd4n25 fqu4n25.pdf pdf_icon

FQD4N25TM

May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology ... See More ⇒

 7.2. Size:822K  onsemi
 fqd4n25.pdf pdf_icon

FQD4N25TM

FQD4N25 N-Channel QFET MOSFET 250 V, 3 A, 1.75 Features 3 A, 250 V, RDS(on) = 1.75 (Max.) @ VGS = 10 V, Description ID = 1.5 A This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar Low Gate Charge (Typ. 4.3 nC) stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 4.8 pF) technology has been especially... See More ⇒

 8.1. Size:521K  fairchild semi
 fqd4n20ltm.pdf pdf_icon

FQD4N25TM

December 2000 TM QFET QFET QFET QFET FQD4N20L / FQU4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.2A, 200V, RDS(on) = 1.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced... See More ⇒

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Detailed specifications: FQD3N60TM , FQD3P20TF , FQD3P20TM , FQD3P50TF , FQD3P50TM , FQD4N20LTM , FQD4N20TF , FQD4N25TF , AON7506 , FQD4N50TF , FQD4N50TM , FQD4P25TF , FQD4P25TM , FQD4P40 , FQD4P40TF , FQD4P40TM , FQD5N15TF .

History: VBFB165R02

Keywords - FQD4N25TM MOSFET specs

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