FQD4N25TM Datasheet. Specs and Replacement
Type Designator: FQD4N25TM 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 35 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.75 Ohm
Package: D-PAK
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FQD4N25TM substitution
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FQD4N25TM datasheet
fqd4n25tf fqd4n25tm fqu4n25tu.pdf
May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology ... See More ⇒
fqd4n25 fqu4n25.pdf
May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology ... See More ⇒
fqd4n25.pdf
FQD4N25 N-Channel QFET MOSFET 250 V, 3 A, 1.75 Features 3 A, 250 V, RDS(on) = 1.75 (Max.) @ VGS = 10 V, Description ID = 1.5 A This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar Low Gate Charge (Typ. 4.3 nC) stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 4.8 pF) technology has been especially... See More ⇒
fqd4n20ltm.pdf
December 2000 TM QFET QFET QFET QFET FQD4N20L / FQU4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.2A, 200V, RDS(on) = 1.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced... See More ⇒
Detailed specifications: FQD3N60TM, FQD3P20TF, FQD3P20TM, FQD3P50TF, FQD3P50TM, FQD4N20LTM, FQD4N20TF, FQD4N25TF, AO4407A, FQD4N50TF, FQD4N50TM, FQD4P25TF, FQD4P25TM, FQD4P40, FQD4P40TF, FQD4P40TM, FQD5N15TF
Keywords - FQD4N25TM MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
MOSFET Parameters. How They Affect Each Other
History: SSH22N50A | FQPF4N20
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