FQD4P40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQD4P40
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.1 Ohm
   Paquete / Cubierta: D-PAK

Búsqueda de reemplazo de MOSFET FQD4P40

FQD4P40 Datasheet (PDF)

..1. Size:780K fairchild semi
fqd4p40.pdf

November 2013FQD4P40P-Channel QFET MOSFET-400 V, -2.7 A, 3.1 Description FeaturesThese P-Channel enhancement mode power field effect -2.7 A, -400 V, RDS(on) = 3.1 (Max.) @ VGS = -10 V,ID = -1.35 Atransistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 18 nC)technology has been especially t

..2. Size:816K onsemi
fqd4p40.pdf

FQD4P40P-Channel QFET MOSFET-400 V, -2.7 A, 3.1 Features -2.7 A, -400 V, RDS(on) = 3.1 (Max.) @ VGS = -10 V,ID = -1.35 ADescription Low Gate Charge (Typ. 18 nC)These P-Channel enhancement mode power field effect Low Crss (Typ. 11 pF)transistors are produced using ON Semiconductors 100% Avalanche Testedproprietary, planar stripe, DMOS technology.

0.1. Size:759K fairchild semi
fqd4p40tf fqd4p40tm.pdf

January 2009QFETFQD4P40 / FQU4P40 400V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.7A, -400V, RDS(on) = 3.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especia

9.1. Size:591K fairchild semi
fqd4p25.pdf

December 2000TMQFETQFETQFETQFETFQD4P25 / FQU4P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 10.3 pF)This advanced techn

9.2. Size:980K fairchild semi
fqd4p25tm ws.pdf

November 2013FQD4P25TM_WSP-Channel QFET MOSFET-250 V, -3.1 A, 2.1 Description FeaturesThis P-Channel enhancement mode power MOSFET is -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary planar ID = -1.55 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 10 nC)technology has been especi

9.3. Size:585K fairchild semi
fqd4p25 fqu4p25.pdf

9.4. Size:2975K onsemi
fqd4p25tm-ws.pdf

FQD4P25TM-WSP-Channel QFET MOSFET-250 V, -3.1 A, 2.1 Features -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V,DescriptionID = -1.55 AThis P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 10 nC)produced using ON Semiconductor Semiconductors Low Crss (Typ. 10.3 pF)proprietary planar stripe and DMOS technology. This advanced MOSFET t

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