FQD4P40. Аналоги и основные параметры

Наименование производителя: FQD4P40

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 400 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 55 ns

Cossⓘ - Выходная емкость: 80 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 3.1 Ohm

Тип корпуса: D-PAK

Аналог (замена) для FQD4P40

- подборⓘ MOSFET транзистора по параметрам

 

FQD4P40 даташит

 ..1. Size:780K  fairchild semi
 fqd4p40.pdf pdf_icon

FQD4P40

November 2013 FQD4P40 P-Channel QFET MOSFET -400 V, -2.7 A, 3.1 Description Features These P-Channel enhancement mode power field effect -2.7 A, -400 V, RDS(on) = 3.1 (Max.) @ VGS = -10 V, ID = -1.35 A transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 18 nC) technology has been especially t

 ..2. Size:816K  onsemi
 fqd4p40.pdf pdf_icon

FQD4P40

FQD4P40 P-Channel QFET MOSFET -400 V, -2.7 A, 3.1 Features -2.7 A, -400 V, RDS(on) = 3.1 (Max.) @ VGS = -10 V, ID = -1.35 A Description Low Gate Charge (Typ. 18 nC) These P-Channel enhancement mode power field effect Low Crss (Typ. 11 pF) transistors are produced using ON Semiconductor s 100% Avalanche Tested proprietary, planar stripe, DMOS technology.

 0.1. Size:759K  fairchild semi
 fqd4p40tf fqd4p40tm.pdf pdf_icon

FQD4P40

January 2009 QFET FQD4P40 / FQU4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.7A, -400V, RDS(on) = 3.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especia

 9.1. Size:591K  fairchild semi
 fqd4p25.pdf pdf_icon

FQD4P40

December 2000 TM QFET QFET QFET QFET FQD4P25 / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 10.3 pF) This advanced techn

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... FQD4N20LTM, FQD4N20TF, FQD4N25TF, FQD4N25TM, FQD4N50TF, FQD4N50TM, FQD4P25TF, FQD4P25TM, BS170, FQD4P40TF, FQD4P40TM, FQD5N15TF, FQD5N15TM, FQD5N20LTF, FQD5N20LTM, FQD5N20TF, FQD5N30TF