FQD5N50CTF Todos los transistores

 

FQD5N50CTF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQD5N50CTF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 48 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 18 nC

Tiempo de elevación (tr): 46 nS

Conductancia de drenaje-sustrato (Cd): 80 pF

Resistencia drenaje-fuente RDS(on): 1.4 Ohm

Empaquetado / Estuche: D-PAK

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FQD5N50CTF Datasheet (PDF)

1.1. fqd5n50c fqd5n50ctf fqd5n50ctm fqd5n50c fqu5n50c fqu5n50ctu.pdf Size:664K _fairchild_semi

FQD5N50CTF
FQD5N50CTF

October 2008 QFET® FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially

3.1. fqd5n50.pdf Size:548K _fairchild_semi

FQD5N50CTF
FQD5N50CTF

TIGER ELECTRONIC CO.,LTD 500V N-Channel MOSFET FQD5N50 DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche an

3.2. fqd5n50tf fqu5n50tu.pdf Size:768K _fairchild_semi

FQD5N50CTF
FQD5N50CTF

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.5A, 500V, RDS(on) = 1.8Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology

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