FQD5N50CTM Todos los transistores

 

FQD5N50CTM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQD5N50CTM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 48 W

Tensión drenaje-fuente |Vds|: 500 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 18 nC

Tiempo de elevación (tr): 46 nS

Conductancia de drenaje-sustrato (Cd): 80 pF

Resistencia drenaje-fuente RDS(on): 1.4 Ohm

Empaquetado / Estuche: D-PAK

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FQD5N50CTM Datasheet (PDF)

0.1. fqd5n50c fqd5n50ctf fqd5n50ctm fqd5n50c fqu5n50c fqu5n50ctu.pdf Size:664K _fairchild_semi

FQD5N50CTM
FQD5N50CTM

October 2008QFETFQD5N50C / FQU5N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 500V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially

7.1. fqd5n50.pdf Size:548K _fairchild_semi

FQD5N50CTM
FQD5N50CTM

TIGER ELECTRONIC CO.,LTD500V N-Channel MOSFETFQD5N50DESCRIPTIONThese N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche an

7.2. fqd5n50tf fqu5n50tu.pdf Size:768K _fairchild_semi

FQD5N50CTM
FQD5N50CTM

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.5A, 500V, RDS(on) = 1.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology

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