FQD5P20TM Todos los transistores

 

FQD5P20TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQD5P20TM

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 45 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 3.7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 10 nC

Tiempo de elevación (tr): 70 nS

Conductancia de drenaje-sustrato (Cd): 75 pF

Resistencia drenaje-fuente RDS(on): 1.4 Ohm

Empaquetado / Estuche: D-PAK

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FQD5P20TM Datasheet (PDF)

1.1. fqd5p20tf fqd5p20tm.pdf Size:657K _fairchild_semi

FQD5P20TM
FQD5P20TM

October 2008 QFET® FQD5P20 / FQU5P20 200V P-Channel MOSFET Features General Description • -3.7A, -200V, RDS(on) = 1.4Ω @VGS = -10 V These P-Channel enhancement mode power field effect • Low gate charge ( typical 10 nC) transistors are produced using Fairchild’s proprietary, • Low Crss ( typical 12 pF) planar stripe, DMOS technology. • Fast switching This advanced techn

3.1. fqd5p20 fqu5p20.pdf Size:657K _fairchild_semi

FQD5P20TM
FQD5P20TM

October 2008 QFET FQD5P20 / FQU5P20 200V P-Channel MOSFET Features General Description -3.7A, -200V, RDS(on) = 1.4? @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchilds proprietary, Low Crss ( typical 12 pF) planar stripe, DMOS technology. Fast switching This advanced technology has been e

 5.1. fqd5p10tf fqd5p10tm.pdf Size:705K _fairchild_semi

FQD5P20TM
FQD5P20TM

October 2008 QFET® FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -3.6A, -100V, RDS(on) = 1.05Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been espec

5.2. fqd5p10 fqu5p10.pdf Size:705K _fairchild_semi

FQD5P20TM
FQD5P20TM

October 2008 QFET FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.6A, -100V, RDS(on) = 1.05? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailored

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