FQD6N40CTM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQD6N40CTM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 48 W
Voltaje máximo drenador - fuente |Vds|: 400 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 4.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 16 nC
Tiempo de subida (tr): 65 nS
Conductancia de drenaje-sustrato (Cd): 80 pF
Resistencia entre drenaje y fuente RDS(on): 1 Ohm
Paquete / Cubierta: D-PAK
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FQD6N40CTM Datasheet (PDF)
fqd6n40ctf fqd6n40ctm fqd6n40c fqu6n40c fqu6n40ctu.pdf
October 2008QFETFQD6N40C / FQU6N40C 400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especiall
fqd6n40c.pdf
FQD6N40CN-Channel QFET MOSFET 400 V, 4.5 A, 1.0 DescriptionFeaturesThis N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar 4.5 A, 400 V, RDS(on) = 1.0 (Max.) @VGS = 10 V, ID = 2.25 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 16 nC)technology has been especially tailored to reduce on-st
fqd6n40tf fqd6n40tm.pdf
April 2000TMQFETQFETQFETQFETFQD6N40 / FQU6N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.2A, 400V, RDS(on) = 1.15 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technolog
fqd6n60ctm.pdf
QFETFQD6N60C600V N-Channel MOSFETFeatures Description 4 A, 600 V, RDS(on) = 2.0 @ VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 16 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typical 7 pF)minimize on-s
fqd6n50ctf fqd6n50ctm fqd6n50c fqu6n50c.pdf
October 2008QFETFQD6N50C / FQU6N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge (typical 19nC)planar stripe, DMOS technology. Low Crss (typical 15pF)This advanced technology has been especially t
fqd6n25tf fqd6n25tm fqd6n25 fqu6n25.pdf
October 2008QFETFQD6N25 / FQU6N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.4A, 250V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.6 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especia
fqd6n60c.pdf
QFETFQD6N60C600V N-Channel MOSFETFeatures Description 4 A, 600 V, RDS(on) = 2.0 @ VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 16 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typical 7 pF)minimize on-s
fqd6n50c.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
