FQD6N40CTM Datasheet. Equivalente

 ..1. Size:654K  fairchild semi
 fqd6n40ctf fqd6n40ctm fqd6n40c fqu6n40c fqu6n40ctu.pdf

October 2008 QFET FQD6N40C / FQU6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especiall

 6.1. Size:940K  onsemi
 fqd6n40c.pdf

FQD6N40C N-Channel QFET MOSFET 400 V, 4.5 A, 1.0 Description Features This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar 4.5 A, 400 V, RDS(on) = 1.0 (Max.) @VGS = 10 V, ID = 2.25 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 16 nC) technology has been especially tailored to reduce on-st

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 fqd6n40tf fqd6n40tm.pdf

April 2000 TM QFET QFET QFET QFET FQD6N40 / FQU6N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.2A, 400V, RDS(on) = 1.15 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technolog

 9.1. Size:679K  fairchild semi
 fqd6n60ctm.pdf

QFET FQD6N60C 600V N-Channel MOSFET Features Description 4 A, 600 V, RDS(on) = 2.0 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 16 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 7 pF) minimize on-s

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 fqd6n50ctf fqd6n50ctm fqd6n50c fqu6n50c.pdf

October 2008 QFET FQD6N50C / FQU6N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge (typical 19nC) planar stripe, DMOS technology. Low Crss (typical 15pF) This advanced technology has been especially t

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 fqd6n25tf fqd6n25tm fqd6n25 fqu6n25.pdf

October 2008 QFET FQD6N25 / FQU6N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.4A, 250V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.6 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especia

 9.4. Size:678K  fairchild semi
 fqd6n60c.pdf

QFET FQD6N60C 600V N-Channel MOSFET Features Description 4 A, 600 V, RDS(on) = 2.0 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 16 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 7 pF) minimize on-s

 9.5. Size:648K  onsemi
 fqd6n50c.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur