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FQD6N40CTM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FQD6N40CTM

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 48 W

Предельно допустимое напряжение сток-исток |Uds|: 400 V

Предельно допустимое напряжение затвор-исток |Ugs|: 30 V

Пороговое напряжение включения |Ugs(th)|: 4 V

Максимально допустимый постоянный ток стока |Id|: 4.5 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 16 nC

Время нарастания (tr): 65 ns

Выходная емкость (Cd): 80 pf

Сопротивление сток-исток открытого транзистора (Rds): 1 Ohm

Тип корпуса: D-PAK

Аналог (замена) для FQD6N40CTM

 

 

FQD6N40CTM Datasheet (PDF)

0.1. fqd6n40ctf fqd6n40ctm fqd6n40c fqu6n40c fqu6n40ctu.pdf Size:654K _fairchild_semi

FQD6N40CTM
FQD6N40CTM

October 2008QFETFQD6N40C / FQU6N40C 400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especiall

7.1. fqd6n40tf fqd6n40tm.pdf Size:723K _fairchild_semi

FQD6N40CTM
FQD6N40CTM

April 2000TMQFETQFETQFETQFETFQD6N40 / FQU6N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.2A, 400V, RDS(on) = 1.15 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technolog

 9.1. fqd6n50ctf fqd6n50ctm fqd6n50c fqu6n50c.pdf Size:757K _fairchild_semi

FQD6N40CTM
FQD6N40CTM

October 2008QFETFQD6N50C / FQU6N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge (typical 19nC)planar stripe, DMOS technology. Low Crss (typical 15pF)This advanced technology has been especially t

9.2. fqd6n60c.pdf Size:678K _fairchild_semi

FQD6N40CTM
FQD6N40CTM

QFETFQD6N60C600V N-Channel MOSFETFeatures Description 4 A, 600 V, RDS(on) = 2.0 @ VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 16 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typical 7 pF)minimize on-s

 9.3. fqd6n60ctm.pdf Size:679K _fairchild_semi

FQD6N40CTM
FQD6N40CTM

QFETFQD6N60C600V N-Channel MOSFETFeatures Description 4 A, 600 V, RDS(on) = 2.0 @ VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 16 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typical 7 pF)minimize on-s

9.4. fqd6n25tf fqd6n25tm fqd6n25 fqu6n25.pdf Size:798K _fairchild_semi

FQD6N40CTM
FQD6N40CTM

October 2008QFETFQD6N25 / FQU6N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.4A, 250V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.6 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especia

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