IRF2903ZSPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF2903ZSPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 231 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 1980 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm

Encapsulados: TO-263

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IRF2903ZSPBF datasheet

 ..1. Size:346K  international rectifier
 irf2903zlpbf irf2903zspbf.pdf pdf_icon

IRF2903ZSPBF

PD - 96098A IRF2903ZSPbF IRF2903ZLPbF Features HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 30V l 175 C Operating Temperature l Fast Switching RDS(on) = 2.4m l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free ID = 75A S Description This HEXFET Power MOSFET utilizes the latest D D processing techniques to achieve extremel

 5.1. Size:705K  infineon
 auirf2903zs auirf2903zl.pdf pdf_icon

IRF2903ZSPBF

AUIRF2903ZS AUTOMOTIVE GRADE AUIRF2903ZL Features VDSS 30V Advanced Process Technology RDS(on) typ. 1.9m Ultra Low On-Resistance max. 2.4m 175 C Operating Temperature ID (Silicon Limited) 235A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Automotive Qualifie

 5.2. Size:204K  inchange semiconductor
 irf2903zs.pdf pdf_icon

IRF2903ZSPBF

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF2903ZS FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMU

 6.1. Size:287K  international rectifier
 irf2903zpbf.pdf pdf_icon

IRF2903ZSPBF

PD -96097A IRF2903ZPbF Features HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 30V l 175 C Operating Temperature l Fast Switching RDS(on) = 2.4m G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free ID = 75A S Description D This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance

MOSTRAR MÁS

Otros transistores... IRF2807PBF, IRF2807SPBF, IRF2807LPBF, IRF2807ZLPBF, IRF2807ZPBF, IRF2807ZSPBF, IRF2903ZLPBF, IRF2903ZPBF, 50N06, IRF2907ZLPBF, IRF2907ZPBF, IRF2907ZS-7PPBF, IRF2907ZSPBF, IRF3610SPBF, IRF3703PBF, IRF3704L, IRF3704LPBF