IRF3610SPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF3610SPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 333 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 103 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 55 nS

Cossⓘ - Capacitancia de salida: 690 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0116 Ohm

Encapsulados: TO-263

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IRF3610SPBF datasheet

 ..1. Size:294K  international rectifier
irf3610spbf.pdf pdf_icon

IRF3610SPBF

IRF3610SPbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 100V l Uninterruptible Power Supply RDS(on) typ. 9.3m l High Speed Power Switching G max. 11.6m l Hard Switched and High Frequency Circuits ID S 103A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche

 6.1. Size:258K  inchange semiconductor
irf3610s.pdf pdf_icon

IRF3610SPBF

Isc N-Channel MOSFET Transistor IRF3610S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 9.1. Size:139K  international rectifier
irf360.pdf pdf_icon

IRF3610SPBF

PD - 90518 REPETITIVE AVALANCHE AND dv/dt RATED IRF360 400V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF360 400V 0.20 25A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design a

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