IRF3710ZLPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF3710ZLPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 160 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 59 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 77 nS
Cossⓘ - Capacitancia de salida: 290 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Paquete / Cubierta: TO-262
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IRF3710ZLPBF Datasheet (PDF)
irf3710zlpbf irf3710zpbf irf3710zspbf.pdf

PD - 95466AIRF3710ZPbFIRF3710ZSPbFFeaturesIRF3710ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureDVDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 18mGDescriptionID = 59A This HEXFET Power MOSFET utilizes the latestSprocessing techn
irf3710zpbf irf3710zspbf irf3710zlpbf.pdf

PD - 95466AIRF3710ZPbFIRF3710ZSPbFFeaturesIRF3710ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureDVDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 18mGDescriptionID = 59A This HEXFET Power MOSFET utilizes the latestSprocessing techn
irf3710zl.pdf

Isc N-Channel MOSFET Transistor IRF3710ZLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 10
irf3710z.pdf

PD - 94632IRF3710ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 18m 175C Operating TemperatureG Fast Switching Repetitive Avalanche Allowed up to TjmaxID = 59ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes th
Otros transistores... IRF3709ZCLPBF , IRF3709ZLPBF , IRF3709ZPBF , IRF3709ZSPBF , IRF3710A , IRF3710LPBF , IRF3710PBF , IRF3710SPBF , IRF1407 , IRF3710ZPBF , IRF3710ZSPBF , IRF3711 , IRF3711L , IRF3711LPBF , IRF3711PBF , IRF3711S , IRF3711SPBF .
History: TPB65R940C | AFN4214W | IPN70R1K2P7S | IPN70R750P7S | FDFC3N108 | SI7212DN | IPN70R600P7S
History: TPB65R940C | AFN4214W | IPN70R1K2P7S | IPN70R750P7S | FDFC3N108 | SI7212DN | IPN70R600P7S



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