IRF3710ZSPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF3710ZSPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 160 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 59 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 77 nS
Cossⓘ - Capacitancia de salida: 290 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Encapsulados: TO-263
Búsqueda de reemplazo de IRF3710ZSPBF MOSFET
- Selecciónⓘ de transistores por parámetros
IRF3710ZSPBF datasheet
irf3710zlpbf irf3710zpbf irf3710zspbf.pdf
PD - 95466A IRF3710ZPbF IRF3710ZSPbF Features IRF3710ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature D VDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 18m G Description ID = 59A This HEXFET Power MOSFET utilizes the latest S processing techn
irf3710zpbf irf3710zspbf irf3710zlpbf.pdf
PD - 95466A IRF3710ZPbF IRF3710ZSPbF Features IRF3710ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature D VDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 18m G Description ID = 59A This HEXFET Power MOSFET utilizes the latest S processing techn
auirf3710z auirf3710zs.pdf
PD - 97470 AUIRF3710Z AUTOMOTIVE GRADE AUIRF3710ZS Features HEXFET Power MOSFET Low On-Resistance 175 C Operating Temperature D VDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax RDS(on) = 18m Lead-Free, RoHS Compliant G Automotive Qualified * ID = 59A Description S Specifically designed for Automotive applications, this HE
auirf3710zstrl.pdf
PD - 97470 AUIRF3710Z AUTOMOTIVE GRADE AUIRF3710ZS Features HEXFET Power MOSFET Low On-Resistance 175 C Operating Temperature D VDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax RDS(on) = 18m Lead-Free, RoHS Compliant G Automotive Qualified * ID = 59A Description S Specifically designed for Automotive applications, this HE
Otros transistores... IRF3709ZPBF, IRF3709ZSPBF, IRF3710A, IRF3710LPBF, IRF3710PBF, IRF3710SPBF, IRF3710ZLPBF, IRF3710ZPBF, IRF530, IRF3711, IRF3711L, IRF3711LPBF, IRF3711PBF, IRF3711S, IRF3711SPBF, IRF3711ZCL, IRF3711ZCLPBF
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