IRF3710ZSPBF Todos los transistores

 

IRF3710ZSPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF3710ZSPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 160 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 59 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 77 nS
   Cossⓘ - Capacitancia de salida: 290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: TO-263
 

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IRF3710ZSPBF Datasheet (PDF)

 ..1. Size:382K  international rectifier
 irf3710zlpbf irf3710zpbf irf3710zspbf.pdf pdf_icon

IRF3710ZSPBF

PD - 95466AIRF3710ZPbFIRF3710ZSPbFFeaturesIRF3710ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureDVDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 18mGDescriptionID = 59A This HEXFET Power MOSFET utilizes the latestSprocessing techn

 ..2. Size:382K  international rectifier
 irf3710zpbf irf3710zspbf irf3710zlpbf.pdf pdf_icon

IRF3710ZSPBF

PD - 95466AIRF3710ZPbFIRF3710ZSPbFFeaturesIRF3710ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureDVDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 18mGDescriptionID = 59A This HEXFET Power MOSFET utilizes the latestSprocessing techn

 5.1. Size:353K  international rectifier
 auirf3710z auirf3710zs.pdf pdf_icon

IRF3710ZSPBF

PD - 97470AUIRF3710ZAUTOMOTIVE GRADEAUIRF3710ZSFeaturesHEXFET Power MOSFET Low On-Resistance 175C Operating TemperatureDVDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18m Lead-Free, RoHS CompliantG Automotive Qualified *ID = 59ADescriptionSSpecifically designed for Automotive applications,this HE

 5.2. Size:330K  international rectifier
 auirf3710zstrl.pdf pdf_icon

IRF3710ZSPBF

PD - 97470AUIRF3710ZAUTOMOTIVE GRADEAUIRF3710ZSFeaturesHEXFET Power MOSFET Low On-Resistance 175C Operating TemperatureDVDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18m Lead-Free, RoHS CompliantG Automotive Qualified *ID = 59ADescriptionSSpecifically designed for Automotive applications,this HE

MOSTRAR MÁS

Otros transistores... IRF3709ZPBF , IRF3709ZSPBF , IRF3710A , IRF3710LPBF , IRF3710PBF , IRF3710SPBF , IRF3710ZLPBF , IRF3710ZPBF , AO4407 , IRF3711 , IRF3711L , IRF3711LPBF , IRF3711PBF , IRF3711S , IRF3711SPBF , IRF3711ZCL , IRF3711ZCLPBF .

History: SI7682DP | GP2M002A060XG

 

 
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