IRF3808LPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF3808LPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 106 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 140 nS

Cossⓘ - Capacitancia de salida: 890 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: TO-262

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IRF3808LPBF datasheet

 ..1. Size:309K  international rectifier
 irf3808lpbf irf3808spbf.pdf pdf_icon

IRF3808LPBF

PD - 95467A IRF3808SPbF IRF3808LPbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D VDSS = 75V Benefits Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007 G Dynamic dv/dt Rating 175 C Operating Temperature ID = 106A Fast Switching S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This Advanced Planar Stripe H

 6.1. Size:165K  international rectifier
 irf3808l.pdf pdf_icon

IRF3808LPBF

PD - 94338A IRF3808S AUTOMOTIVE MOSFET IRF3808L Typical Applications HEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits VDSS = 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007 Dynamic dv/dt Rating G 175 C Operating Temperature ID = 106AV Fast Switching S Repetitive Avalanche Allowed up to T

 6.2. Size:256K  inchange semiconductor
 irf3808l.pdf pdf_icon

IRF3808LPBF

Isc N-Channel MOSFET Transistor IRF3808L FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75

 7.1. Size:161K  international rectifier
 irf3808s.pdf pdf_icon

IRF3808LPBF

PD - 94338A IRF3808S AUTOMOTIVE MOSFET IRF3808L Typical Applications HEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits VDSS = 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007 Dynamic dv/dt Rating G 175 C Operating Temperature ID = 106AV Fast Switching S Repetitive Avalanche Allowed up to T

MOSTRAR MÁS

Otros transistores... IRF3717PBF, IRF3717PBF-1, IRF3805L-7PPBF, IRF3805LPBF, IRF3805PBF, IRF3805S-7PPBF, IRF3805SPBF, IRF3808L, IRF520, IRF3808PBF, IRF3808SPBF, FQD6N50CTF, FQD6N50CTM, FQD6N60CTM, FQD6P25TF, FQD6P25TM, FQD7N10LTF