IRF3808LPBF Todos los transistores

 

IRF3808LPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF3808LPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 106 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 140 nS
   Cossⓘ - Capacitancia de salida: 890 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO-262
     - Selección de transistores por parámetros

 

IRF3808LPBF Datasheet (PDF)

 ..1. Size:309K  international rectifier
irf3808lpbf irf3808spbf.pdf pdf_icon

IRF3808LPBF

PD - 95467AIRF3808SPbFIRF3808LPbFTypical Applications HEXFET Power MOSFET Industrial Motor DriveDVDSS = 75VBenefits Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.007G Dynamic dv/dt Rating 175C Operating TemperatureID = 106A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Advanced Planar Stripe H

 6.1. Size:165K  international rectifier
irf3808l.pdf pdf_icon

IRF3808LPBF

PD - 94338AIRF3808SAUTOMOTIVE MOSFETIRF3808LTypical ApplicationsHEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical SystemsDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.007 Dynamic dv/dt RatingG 175C Operating TemperatureID = 106AV Fast SwitchingS Repetitive Avalanche Allowed up to T

 6.2. Size:256K  inchange semiconductor
irf3808l.pdf pdf_icon

IRF3808LPBF

Isc N-Channel MOSFET Transistor IRF3808LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75

 7.1. Size:161K  international rectifier
irf3808s.pdf pdf_icon

IRF3808LPBF

PD - 94338AIRF3808SAUTOMOTIVE MOSFETIRF3808LTypical ApplicationsHEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical SystemsDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.007 Dynamic dv/dt RatingG 175C Operating TemperatureID = 106AV Fast SwitchingS Repetitive Avalanche Allowed up to T

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SVS65R380DD4TR | AOB418 | WVM13N50 | FDMQ8203 | SL3N06 | 2SJ665

 

 
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