IRF3808LPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF3808LPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 200
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 106
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 150
nC
trⓘ - Rise Time: 140
nS
Cossⓘ -
Output Capacitance: 890
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007
Ohm
Package:
TO-262
IRF3808LPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF3808LPBF
Datasheet (PDF)
..1. Size:309K international rectifier
irf3808lpbf irf3808spbf.pdf 
PD - 95467AIRF3808SPbFIRF3808LPbFTypical Applications HEXFET Power MOSFET Industrial Motor DriveDVDSS = 75VBenefits Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.007G Dynamic dv/dt Rating 175C Operating TemperatureID = 106A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Advanced Planar Stripe H
6.1. Size:165K international rectifier
irf3808l.pdf
PD - 94338AIRF3808SAUTOMOTIVE MOSFETIRF3808LTypical ApplicationsHEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical SystemsDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.007 Dynamic dv/dt RatingG 175C Operating TemperatureID = 106AV Fast SwitchingS Repetitive Avalanche Allowed up to T
6.2. Size:256K inchange semiconductor
irf3808l.pdf
Isc N-Channel MOSFET Transistor IRF3808LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75
7.1. Size:161K international rectifier
irf3808s.pdf
PD - 94338AIRF3808SAUTOMOTIVE MOSFETIRF3808LTypical ApplicationsHEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical SystemsDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.007 Dynamic dv/dt RatingG 175C Operating TemperatureID = 106AV Fast SwitchingS Repetitive Avalanche Allowed up to T
7.2. Size:246K international rectifier
irf3808pbf.pdf
PD - 94972AIRF3808PbFHEXFET Power MOSFETTypical Applications Industrial Motor DriveDVDSS = 75VBenefits Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007G Dynamic dv/dt Rating 175C Operating TemperatureID = 140A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Advanced Planar Stripe HEXFET Power
7.3. Size:221K international rectifier
auirf3808.pdf
PD - 97697AAUTOMOTIVE GRADEAUIRF3808HEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS75Vl Low On-ResistanceRDS(on) typ.5.9ml Dynamic dv/dt RatingGl 175C Operating Temperaturemax 7.0ml Fast SwitchingSID140Al Fully Avalanche Ratedl Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*D
7.4. Size:131K international rectifier
irf3808.pdf
PD - 94291BIRF3808AUTOMOTIVE MOSFETHEXFET Power MOSFETTypical Applications Integrated Starter AlternatorD 42 Volts Automotive Electrical SystemsVDSS = 75VBenefits Advanced Process TechnologyRDS(on) = 0.007 Ultra Low On-ResistanceG Dynamic dv/dt Rating 175C Operating TemperatureID = 140AVS Fast Switching Repetitive Avalanche Allowed up to TjmaxDescr
7.5. Size:220K international rectifier
auirf3808s.pdf
PD - 97698AAUTOMOTIVE GRADEAUIRF3808SHEXFET Power MOSFETFeatures Advanced Planar TechnologyD Low On-Resistance VDSS 75V Dynamic dV/dT RatingRDS(on) typ.5.9m 175C Operating TemperatureG max. 7.0m Fast SwitchingS Fully Avalanche Rated ID106A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive
7.6. Size:246K infineon
irf3808pbf.pdf
PD - 94972AIRF3808PbFHEXFET Power MOSFETTypical Applications Industrial Motor DriveDVDSS = 75VBenefits Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007G Dynamic dv/dt Rating 175C Operating TemperatureID = 140A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Advanced Planar Stripe HEXFET Power
7.7. Size:258K inchange semiconductor
irf3808s.pdf
Isc N-Channel MOSFET Transistor IRF3808SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
7.8. Size:245K inchange semiconductor
irf3808.pdf
isc N-Channel MOSFET Transistor IRF3808IIRF3808FEATURESStatic drain-source on-resistance:RDS(on) 7.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM
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