All MOSFET. IRF3808LPBF Datasheet

 

IRF3808LPBF Datasheet and Replacement


   Type Designator: IRF3808LPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 106 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 890 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO-262
 

 IRF3808LPBF substitution

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IRF3808LPBF Datasheet (PDF)

 ..1. Size:309K  international rectifier
irf3808lpbf irf3808spbf.pdf pdf_icon

IRF3808LPBF

PD - 95467AIRF3808SPbFIRF3808LPbFTypical Applications HEXFET Power MOSFET Industrial Motor DriveDVDSS = 75VBenefits Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.007G Dynamic dv/dt Rating 175C Operating TemperatureID = 106A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Advanced Planar Stripe H

 6.1. Size:165K  international rectifier
irf3808l.pdf pdf_icon

IRF3808LPBF

PD - 94338AIRF3808SAUTOMOTIVE MOSFETIRF3808LTypical ApplicationsHEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical SystemsDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.007 Dynamic dv/dt RatingG 175C Operating TemperatureID = 106AV Fast SwitchingS Repetitive Avalanche Allowed up to T

 6.2. Size:256K  inchange semiconductor
irf3808l.pdf pdf_icon

IRF3808LPBF

Isc N-Channel MOSFET Transistor IRF3808LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75

 7.1. Size:161K  international rectifier
irf3808s.pdf pdf_icon

IRF3808LPBF

PD - 94338AIRF3808SAUTOMOTIVE MOSFETIRF3808LTypical ApplicationsHEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical SystemsDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.007 Dynamic dv/dt RatingG 175C Operating TemperatureID = 106AV Fast SwitchingS Repetitive Avalanche Allowed up to T

Datasheet: IRF3717PBF , IRF3717PBF-1 , IRF3805L-7PPBF , IRF3805LPBF , IRF3805PBF , IRF3805S-7PPBF , IRF3805SPBF , IRF3808L , CS150N03A8 , IRF3808PBF , IRF3808SPBF , FQD6N50CTF , FQD6N50CTM , FQD6N60CTM , FQD6P25TF , FQD6P25TM , FQD7N10LTF .

History: ME5602D-G | TPCA8060-H | TPCA8102 | AD8N60S | DMN4009LK3 | AO6804A | FG694301

Keywords - IRF3808LPBF MOSFET datasheet

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