FQD7N10LTF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQD7N10LTF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100 nS
Cossⓘ - Capacitancia de salida: 55 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
Paquete / Cubierta: D-PAK
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FQD7N10LTF Datasheet (PDF)
fqd7n10ltf fqd7n10ltm fqd7n10l fqu7n10l fqu7n10ltu.pdf
October 2008QFETFQD7N10L / FQU7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology is especia
fqd7n10l.pdf
FQD7N10Lwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
fqd7n10tm.pdf
October 2008QFETFQD7N10 / FQU7N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology is especially tail
fqd7n20tf fqd7n20tm fqd7n20 fqu7n20.pdf
October 2008QFETFQD7N20 / FQU7N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.3A, 200V, RDS(on) = 0.69 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.0 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology has been especia
fqd7n20ltf fqd7n20ltm.pdf
October 2008QFETFQD7N20L / FQU7N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 200V, RDS(on) = 0.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.8 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology is especi
fqd7n30tf fqd7n30tm fqd7n30 fqu7n30.pdf
April 2000TMQFETQFETQFETQFETFQD7N30 / FQU7N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 300V, RDS(on) = 0.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology h
fqd7n20l fqu7n20l.pdf
December 2000TMQFETQFETQFETQFETFQD7N20L / FQU7N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 200V, RDS(on) = 0.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.8 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced
fqd7n30.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: STF15NM60ND
History: STF15NM60ND
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918