Справочник MOSFET. FQD7N10LTF

 

FQD7N10LTF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQD7N10LTF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 4.6 nC
   trⓘ - Время нарастания: 100 ns
   Cossⓘ - Выходная емкость: 55 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
   Тип корпуса: D-PAK

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FQD7N10LTF Datasheet (PDF)

 ..1. Size:625K  fairchild semi
 fqd7n10ltf fqd7n10ltm fqd7n10l fqu7n10l fqu7n10ltu.pdf

FQD7N10LTF FQD7N10LTF

October 2008QFETFQD7N10L / FQU7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology is especia

 6.1. Size:884K  cn vbsemi
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FQD7N10Lwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

 7.1. Size:589K  fairchild semi
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October 2008QFETFQD7N10 / FQU7N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology is especially tail

 9.1. Size:802K  fairchild semi
 fqd7n20tf fqd7n20tm fqd7n20 fqu7n20.pdf

FQD7N10LTF FQD7N10LTF

October 2008QFETFQD7N20 / FQU7N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.3A, 200V, RDS(on) = 0.69 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.0 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology has been especia

 9.2. Size:622K  fairchild semi
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FQD7N10LTF FQD7N10LTF

October 2008QFETFQD7N20L / FQU7N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 200V, RDS(on) = 0.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.8 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology is especi

 9.3. Size:581K  fairchild semi
 fqd7n30tf fqd7n30tm fqd7n30 fqu7n30.pdf

FQD7N10LTF FQD7N10LTF

April 2000TMQFETQFETQFETQFETFQD7N30 / FQU7N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 300V, RDS(on) = 0.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology h

 9.4. Size:569K  fairchild semi
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December 2000TMQFETQFETQFETQFETFQD7N20L / FQU7N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 200V, RDS(on) = 0.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.8 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced

 9.5. Size:1023K  onsemi
 fqd7n30.pdf

FQD7N10LTF FQD7N10LTF

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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