IRFY130 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFY130
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 75 max nS
Cossⓘ - Capacitancia de salida: 240 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Encapsulados: TO257AA
Búsqueda de reemplazo de IRFY130 MOSFET
- Selecciónⓘ de transistores por parámetros
IRFY130 datasheet
irfy130.pdf
PD - 94183 IRFY130,IRFY130M POWER MOSFET 100V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY130 0.18 14.4A Glass IRFY130M 0.18 14.4A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low on
irfy130c.pdf
PD - 91286D IRFY130C,IRFY130CM POWER MOSFET 100V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY130C 0.18 14.4A Ceramic IRFY130CM 0.18 14.4A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves ve
irfy130m.pdf
PD - 94183 IRFY130,IRFY130M POWER MOSFET 100V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY130 0.18 14.4A Glass IRFY130M 0.18 14.4A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low on
irfy130cm.pdf
PD - 91286D IRFY130C,IRFY130CM POWER MOSFET 100V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY130C 0.18 14.4A Ceramic IRFY130CM 0.18 14.4A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves ve
Otros transistores... IRFWZ14A , IRFWZ24A , IRFWZ34A , IRFWZ44A , IRFY044 , IRFY044C , IRFY120 , IRFY120C , IRFB3607 , IRFY130C , IRFY140 , IRFY140C , IRFY240 , IRFY240C , IRFY340 , IRFY340C , IRFY430 .
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