FQD7P06TM Todos los transistores

 ..1. Size:707K  fairchild semi
 fqd7p06tf fqd7p06tm fqd7p06 fqu7p06 fqu7p06tu.pdf

May 2001 TM QFET FQD7P06 / FQU7P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -5.4A, -60V, RDS(on) = 0.45 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially

 7.1. Size:587K  onsemi
 fqd7p06.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:731K  fairchild semi
 fqd7p20tf fqd7p20tm fqd7p20 fqu7p20 fqu7p20tu.pdf

April 2000 TM QFET QFET QFET QFET FQD7P20 / FQU7P20 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -5.7A, -200V, RDS(on) = 0.69 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technolo

 9.2. Size:947K  onsemi
 fqd7p20.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.3. Size:265K  inchange semiconductor
 fqd7p20.pdf

isc P-Channel MOSFET Transistor FQD7P20 FEATURES Drain Current I = -5.7A@ T =25 D C Drain Source Voltage- V = -200V(Min) DSS Static Drain-Source On-Resistance R = 0.69 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu