Справочник MOSFET. FQD7P06TM

 

FQD7P06TM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQD7P06TM
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 28 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 110 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.451 Ohm
   Тип корпуса: D-PAK

 Аналог (замена) для FQD7P06TM

 

 

FQD7P06TM Datasheet (PDF)

 ..1. Size:707K  fairchild semi
 fqd7p06tf fqd7p06tm fqd7p06 fqu7p06 fqu7p06tu.pdf

FQD7P06TM FQD7P06TM

May 2001TMQFETFQD7P06 / FQU7P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -5.4A, -60V, RDS(on) = 0.45 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially

 7.1. Size:587K  onsemi
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FQD7P06TM FQD7P06TM

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:731K  fairchild semi
 fqd7p20tf fqd7p20tm fqd7p20 fqu7p20 fqu7p20tu.pdf

FQD7P06TM FQD7P06TM

April 2000TMQFETQFETQFETQFETFQD7P20 / FQU7P20200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -5.7A, -200V, RDS(on) = 0.69 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technolo

 9.2. Size:947K  onsemi
 fqd7p20.pdf

FQD7P06TM FQD7P06TM

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.3. Size:265K  inchange semiconductor
 fqd7p20.pdf

FQD7P06TM FQD7P06TM

isc P-Channel MOSFET Transistor FQD7P20FEATURESDrain Current I = -5.7A@ T =25D CDrain Source Voltage-: V = -200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.69(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

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History: AP8600MT-L

 

 
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