IRFY130C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFY130C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 75(max) nS
Cossⓘ - Capacitancia de salida: 240 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: TO257AA
Búsqueda de reemplazo de IRFY130C MOSFET
IRFY130C Datasheet (PDF)
irfy130c.pdf

PD - 91286DIRFY130C,IRFY130CMPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY130C 0.18 14.4A CeramicIRFY130CM 0.18 14.4A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves ve
irfy130cm.pdf

PD - 91286DIRFY130C,IRFY130CMPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY130C 0.18 14.4A CeramicIRFY130CM 0.18 14.4A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves ve
irfy130m.pdf

PD - 94183IRFY130,IRFY130MPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY130 0.18 14.4A GlassIRFY130M 0.18 14.4A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on
irfy130.pdf

PD - 94183IRFY130,IRFY130MPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY130 0.18 14.4A GlassIRFY130M 0.18 14.4A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on
Otros transistores... IRFWZ24A , IRFWZ34A , IRFWZ44A , IRFY044 , IRFY044C , IRFY120 , IRFY120C , IRFY130 , IRLZ44N , IRFY140 , IRFY140C , IRFY240 , IRFY240C , IRFY340 , IRFY340C , IRFY430 , IRFY430C .
History: APT1004R2AN | FQPF30N06L | APT5015BLC | APT1004R2GN | FTP03N03N | APT10043JVR
History: APT1004R2AN | FQPF30N06L | APT5015BLC | APT1004R2GN | FTP03N03N | APT10043JVR



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: SLI13N50C | SLH95R130GTZ | SLH65R180E7C | SLH60R075GTDI | SLH60R043E7D | SLH10RN20T | SLF95R760GTZ | SLF16N65S | SLF12N65SV | SLF10N65SV | SLE65R1K2E7 | SLD95R3K2GTZ | SLD90N03TB | SLD90N02TB | SLD8N65SV | SLD8N50UD
Popular searches
2sc1124 | 2n408 | 2sc2690 | d718 datasheet | mp38 transistor | 2sc2389 | b331 transistor | 2sa720