IRFY130C Todos los transistores

 

IRFY130C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFY130C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 75(max) nS
   Cossⓘ - Capacitancia de salida: 240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO257AA
     - Selección de transistores por parámetros

 

IRFY130C Datasheet (PDF)

 ..1. Size:164K  international rectifier
 irfy130c.pdf pdf_icon

IRFY130C

PD - 91286DIRFY130C,IRFY130CMPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY130C 0.18 14.4A CeramicIRFY130CM 0.18 14.4A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves ve

 0.1. Size:163K  international rectifier
 irfy130cm.pdf pdf_icon

IRFY130C

PD - 91286DIRFY130C,IRFY130CMPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY130C 0.18 14.4A CeramicIRFY130CM 0.18 14.4A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves ve

 7.1. Size:162K  international rectifier
 irfy130m.pdf pdf_icon

IRFY130C

PD - 94183IRFY130,IRFY130MPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY130 0.18 14.4A GlassIRFY130M 0.18 14.4A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on

 7.2. Size:164K  international rectifier
 irfy130.pdf pdf_icon

IRFY130C

PD - 94183IRFY130,IRFY130MPOWER MOSFET100V, N-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY130 0.18 14.4A GlassIRFY130M 0.18 14.4A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on

MOSTRAR MÁS

Otros transistores... IRFWZ24A , IRFWZ34A , IRFWZ44A , IRFY044 , IRFY044C , IRFY120 , IRFY120C , IRFY130 , P60NF06 , IRFY140 , IRFY140C , IRFY240 , IRFY240C , IRFY340 , IRFY340C , IRFY430 , IRFY430C .

History: ATP201 | IXFN64N60P | BL25N65-W | SMP40N10 | 2N6783LCC4 | IRF624A | WNM3017

 

 
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