FQI13N06LTU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQI13N06LTU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 13.6 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 90 nS
Cossⓘ - Capacitancia de salida: 95 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
Paquete / Cubierta: I2-PAK
Búsqueda de reemplazo de FQI13N06LTU MOSFET
FQI13N06LTU Datasheet (PDF)
fqb13n06ltm fqi13n06ltu.pdf

May 2001TMQFETFQB13N06L / FQI13N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.6A, 60V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been es
fqb13n06tm fqi13n06tu.pdf

May 2001TMQFETFQB13N06 / FQI13N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 60V, RDS(on) = 0.135 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology has been especially
fqb13n50ctm fqb13n50c fqi13n50c fqi13n50ctu.pdf

October 2008QFETFQB13N50C/FQI13N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 43nC)planar stripe, DMOS technology. Low Crss ( typical 20pF)This advanced technology has been especially
fqi13n50c.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... FQH90N15 , FQI10N20CTU , FQI10N60CTU , FQI11N40TU , FQI11P06TU , FQI12N50TU , FQI12N60CTU , FQI12N60TU , IRFZ44 , FQI13N06TU , FQI13N50CTU , FQI15P12TU , FQI16N25CTU , FQI17N08LTU , FQI17N08TU , FQI17P06TU , FQI19N20CTU .
History: DMG4822SSD | RSM5853P | NCE65NF068LL | IXTM10N60 | IXTH3N100P | SM6A24NSU | STD100NH02LT4
History: DMG4822SSD | RSM5853P | NCE65NF068LL | IXTM10N60 | IXTH3N100P | SM6A24NSU | STD100NH02LT4



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
2sa1370 | 4508nh mosfet | a94 transistor | c5149 datasheet | m1830m mosfet | pkch2bb mosfet | 2024ont | 2n1306 transistor