FQI13N06LTU Specs and Replacement
Type Designator: FQI13N06LTU
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13.6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: I2-PAK
FQI13N06LTU substitution
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FQI13N06LTU datasheet
fqb13n06ltm fqi13n06ltu.pdf
May 2001 TM QFET FQB13N06L / FQI13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13.6A, 60V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been es... See More ⇒
fqb13n06tm fqi13n06tu.pdf
May 2001 TM QFET FQB13N06 / FQI13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 60V, RDS(on) = 0.135 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology has been especially ... See More ⇒
fqb13n50ctm fqb13n50c fqi13n50c fqi13n50ctu.pdf
October 2008 QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 43nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially ... See More ⇒
fqi13n50c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FQH90N15, FQI10N20CTU, FQI10N60CTU, FQI11N40TU, FQI11P06TU, FQI12N50TU, FQI12N60CTU, FQI12N60TU, IRFZ44, FQI13N06TU, FQI13N50CTU, FQI15P12TU, FQI16N25CTU, FQI17N08LTU, FQI17N08TU, FQI17P06TU, FQI19N20CTU
Keywords - FQI13N06LTU MOSFET specs
FQI13N06LTU cross reference
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