FQI27N25TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQI27N25TU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 180 W
   Voltaje máximo drenador - fuente |Vds|: 250 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 25.5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
   Carga de la puerta (Qg): 50 nC
   Tiempo de subida (tr): 270 nS
   Conductancia de drenaje-sustrato (Cd): 360 pF
   Resistencia entre drenaje y fuente RDS(on): 0.11 Ohm
   Paquete / Cubierta: I2-PAK

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FQI27N25TU Datasheet (PDF)

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fqb27n25tm am002 fqi27n25tu fqi27n25 fqb27n25.pdf

May 2000TMQFETQFETQFETQFETFQB27N25 / FQI27N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology

..2. Size:1099K fairchild semi
fqi27n25tu f085.pdf

April 2010tmFQI27N25TU_F085250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailo

9.1. Size:1071K fairchild semi
fqb27p06tm fqi27p06tu.pdf

October 2008QFETFQB27P06 / FQI27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especia

9.2. Size:1119K fairchild semi
fqb27p06 fqi27p06.pdf

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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